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[ Instrument Network Instrument Development ] Recently, the Functional Materials Laboratory of the Institute of Solid State Physics found in the study of p-type transparent conductive films based on related electronic materials that the adjustment of the electron correlation intensity in the associated oxides is effective in exploring high-performance p-type TCO materials. way. Relevant research results were published in Physical Review Applied and selected as Editors'suggestion papers. Dr. Zhao Minglin from Jiangsu University of Science and Technology and Professor He Gang from Anhui University participated in the research work.
Comparison of transparent conductive properties of typical p-type TCO films
Transparent conductive oxide (TCO) thin film is an important functional material that integrates optical transparency and electrical conductivity. It has been widely used as a transparent electrode for optoelectronic devices such as flat panel displays, solar cells, touch panels and light emitting diodes. The TCO material is classified into an n-type, that is, an electron conductive type and a p-type, that is, a hole conductive type, depending on the type of the conductive carriers. The combination of n-type and p-type TCO films can also be used to construct devices such as transparent diodes and transparent field effect transistors, which greatly expands the application of TCO materials and the birth of new optoelectronic devices. However, the current practical application of TCO materials is n-type, and the lack of high-performance p-type materials severely restricts the application of TCO materials. The reason is due to the electronic structure of the metal oxide itself: the metal atom in the metal oxide is ionically bonded to the oxygen atom, and the valence band is composed of a strongly localized O 2p orbital, resulting in an effective mass of the metal oxide hole. Large, low hole mobility and poor hole doping. Therefore, how to adjust the price of metal oxides to weaken its localization effect is a key factor in obtaining high-performance p-type TCO.
To this end, from the perspective of the electronic structure of materials, the researchers proposed the idea of ​​using high-performance p-type TCO in the correlation of oxides caused by the interaction between electrons and Coulomb interactions: on the one hand, electronic association will lead to its The valence band consists of the d orbital of the transition metal ion or is hybridized with the O 2p orbital to ensure the p-type conductivity of the material; on the other hand, the increase in the effective mass of the carrier caused by the electron correlation will be beneficial in the visible region. Open the transparent window. Therefore, electronic correlation can be used as a key parameter for exploring high performance p-type TCO materials. Based on the above ideas, the researchers found that a good balance of p-type conductivity and optical transparency can be achieved in a V2O3 film with low electron correlation intensity. Different thickness V2O3 films have high transmittance in the visible region (40%-78%) while maintaining good conductivity (400-2122Scm-1), and the transparent window is 0.97-3.6eV. The above results indicate that the adjustment of the electron correlation intensity in the associated oxide is an effective way to explore high performance p-type TCO materials.
The work was supported by the National Natural Science Foundation of China and the key research and development projects of the Ministry of Science and Technology.